By increasing the switching speed, recovery times, and other electrical properties of your silicon wafers, diodes, or IGBTs, you can increase your competitive advantage and gain greater market share in the industries you target.
Radiation-based Electron Beam (E-Beam) processing is a reliable and reproducible method for tailoring switching speeds (minority carrier lifetime control for power semiconductors) of many bipolar silicon power semiconductor devices such as IGBTs, SCRs, BJTs, and GTOs. This (heavy metal diffusion for lifetime control) offers significant advantages over the conventional processes of gold or platinum doping:
- The E-Beam irradiation effect is fully reversible through subsequent annealing
- Easily controlled uniformity and high reproducibility
- The ability to process not only wafers, but also final (packaged) devices
E-Beam irradiation is reliable and reproducible
Our wafer carrier not only allows for the processing of stacks of wafers in a single run for cost-effective processing, but also allows uniform dose absorption throughout the stacks and across the wafers.
- E-Beam energies up to 12 MeV in North America, Europe, and Asia
- Correct dose application every time, by adhering to professional quality assurance procedures
- Rapid and reliable turn times developed through experience in domestic and international logistics
Use E-Beam to achieve feature enhancements in numerous semiconductors
- Diodes
- Thyristors
- Gate Turn Off Thyristors (GTOs)
- Insulated Gate Bipolar Transistors (IGBTs)
- Bipolar Junction Transistors (BJTs)
- Power MOSFETs (their body diodes)
- Silicon wafers
- Components within the solar energy industry
- Components within the electric vehicle industry
